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BTA20-700BW Datasheet

Part Number BTA20-700BW
Manufacturers INCHANGE
Logo INCHANGE
Description Triac
Datasheet BTA20-700BW DatasheetBTA20-700BW Datasheet (PDF)

isc Triacs BTA20-700BW FEATURES ·With TO-220AB insulated package ·Suitables for general purpose where high surge current capability is required.Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=70℃ .

  BTA20-700BW   BTA20-700BW






Part Number BTA20-700BW
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 20A Snubberless Triacs
Datasheet BTA20-700BW DatasheetBTA20-700BW Datasheet (PDF)

A2 G A1 A1 A2 G TO-220AB Insulated BTA20 20 A Snubberless™ Triacs Datasheet - production data Features • IT(RMS) = 20 A • VDRM, VRRM = 600 and 700 V • IGT (Q1) (max) = 35 and 50 mA Description The BTA20 Triacs use high performance glass passivated chip technology. The Snubberless concept offers suppression of the RC network and is suitable for applications such as phase control and static switching on inductive or resistive load. Thanks to their clip assembly technique, the BTA20 Triacs provide.

  BTA20-700BW   BTA20-700BW







Triac

isc Triacs BTA20-700BW FEATURES ·With TO-220AB insulated package ·Suitables for general purpose where high surge current capability is required.Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=70℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 700 700 20 210 125 -45~150 2.8 60 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ IGT Gate trigger current Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω IH Holding current IGT= 0.5A, Gate Open VGT Gate trigger voltage Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω VTM On-state voltage IT= 28A; tp= 380μs MIN MAX UNIT 0.01 3.0 mA 0.01 3.0 mA 2 50 mA 75 mA 1.5 V 1.7 V isc website:www.iscsemi.com isc & iscsemi is registered trademark NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only .


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