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BT136E

NXP

TRIACS SENSITIVE GATE

Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate tria...


NXP

BT136E

File Download Download BT136E Datasheet


Description
Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT136 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT136Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600E 600 4 25 MAX. 800E 800 4 25 UNIT V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS www.DataSheet4U.com MIN. -40 -600 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 MAX. -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-...




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