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BT134-600B

Inchange Semiconductor

Triacs

isc Triacs BT134-600B FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and ...


Inchange Semiconductor

BT134-600B

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isc Triacs BT134-600B FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and phase control applications , which are intended to be interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave) ITSM Non-repetitive peak on-state current PGM Peak gate power dissipation PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN 600 600 4 25 5 0.5 110 -45~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ 0.01 0.2 mA 0.01 0.2 mA Ⅰ 6 IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A Ⅲ 6 mA 6 Ⅳ 10 VTM On-state voltage IT= 4A 1.7 V IH Holding current IGT= 0.1A, VD= 12V 8 mA VGT Gate trigger voltage VD=12V; IT= 0.1A 1.5 V NOTICE: isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented on...




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