BST51

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 16 1999 Apr 26 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BST60, BST61 and BST62. 1 2 handbook, halfpage BST50; BST51; BST52 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 3 MAM327 1 MARKING TYPE NUMBER BST50 BST51 BST52 MARKING CODE AS1 AS2 AS3 Bottom view Fig.1 Simplified outline (SOT89) and symbol. 1999 Apr 26 2 Philips Semiconductors Product specification NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST50 BST51 BST52 VCES collector-emitter voltage BST50 BST51 BST52 VEBO IC ICM IB Ptot Tstg Tj Tamb Note emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 PARAMETER collector-base voltage CONDITIONS open emitter BST50; BST51; BST52 MIN. − − − − − − − − − − − −65 − −65 MAX. 60 80 90 45 60 80 5 0.5 1.5 100 1.3 +150 150 +150 V V V V V V V A A U...