BSS84P

Final data BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary VDS RDS(on) ID 3 · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated -60 8 -0.17 SOT-23 V W A 2 1 VPS05161 Drain pin 3 Type BSS 84 P Package SOT-23 Ordering Code Q67041-S1417 Marking YBs Gate pin1 Source pin 2 Maximum Ratings, at TA = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.17 -0.14 Unit A Pulsed drain current TA=25°C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg -0.68 2.6 0.036 -6 ±20 0.36 -55... +150 55/150/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25W Avalanche energy, periodic limited by Tjmax Reverse diode d v/dt IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-09-04 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSS 84 P Symbol min. RthJS RthJA - Values typ. max. 200 Unit K/W - 350 300 Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =-250µA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) -60 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID=-20µA Ze...