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BSS82 Datasheet

Part Number BSS82
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description PNP Transistors
Datasheet BSS82 DatasheetBSS82 Datasheet (PDF)

BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base curren.

  BSS82   BSS82






Part Number BSS82
Manufacturers Kexin
Logo Kexin
Description PNP Silicon Switching Transistors
Datasheet BSS82 DatasheetBSS82 Datasheet (PDF)

SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperatur.

  BSS82   BSS82







PNP Transistors

BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit V V mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO ty.


2005-09-05 : BSS119    BSS110    BSS110    BSS101    M60014    D7810    PDM1405HA    PDM41256    PDMB200E6    BSS135   


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