BSS 295
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G ...
BSS 295
SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level
VGS(th) = 0.8...2.0V
Pin 1 G Type BSS 295 Type BSS 295 BSS 295
Pin 2 D Marking SS 295
Pin 3 S
VDS
50 V
ID
1.4 A
RDS(on)
0.3 Ω
Package TO-92
Ordering Code Q67000-S238 Q67000-S105
Tape and Reel Information E6288 E6325
Maximum Ratings Parameter Drain source
voltage Drain-gate
voltage Symbol Values 50 50 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source
voltage Gate-source peak
voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 1.4
TA = 24 °C
DC drain current, pulsed
IDpuls
5.6
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 295
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown
voltage Values typ. max. Unit
V(BR)DSS
50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold
voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate
voltage drain current
IDSS
µA nA nA Ω 0.3 0.5
VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C VDS = 30 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 ...