BSS138W

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-323 surface mount package D S G SOT-323 Marking : 138 Absolute Maximum Ratings Symbol VDSS VGSS ID TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Value 50 ±20 (Note1) 0.21 0.84 -55 to +150 300 Units V V A A °C °C - Continuous - Pulsed Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Symbol PD RθJA Parameter Maximum Power Dissipation Derate Above 25°C Thermal Resistance, Junction to Ambient (Note1) (Note1) Value 340 2.72 367 Units mW mW/°C °C/W Package Marking and Ordering Information Device Marking 138 Device BSS138W Reel Size 7’’ Tape width 8mm Quantity 3000 units ...