BSS110

BSS 110 SIPMOS ® Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.17 TA = 35 °C DC drain current, pulsed IDpuls -0.68 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BSS 110 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS -50 -1.5 -0.1 -2 -1 5.3 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 -0.1 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -10 nA Ω 10 VGS = -20 V, VDS = 0 ...