BSR30

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 01 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Telephony and general industrial applications Thick and thin-film circuits. handbook, halfpage BSR30; BSR31; BSR33 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. 3 2 1 MARKING TYPE NUMBER BSR30 BSR31 BSR33 MARKING CODE BR1 BR2 BR4 1 Bottom view 2 3 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BSR30; BSR31 BSR33 VCEO collector-emitter voltage BSR30; BSR31 BSR33 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −60 −80 −5 −1 −2 −200 1.35 +150 150 ...