BSP308

w at N-Channel .D w Enhancement mode w Logic Level Features dv/dt rated SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage Continuous drain current h S a ee U 4 t m o .c Preliminary data BSP308 VDS ID 4 30 0.05 4.7 V Ω A Drain-Source on-state resistance RDS(on) Type BSP308 Package SOT-223 Ordering Code Q67000-S4011 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 70 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation w w w t a .D S a e h ID U 4 t e .c G m o 2 1 3 VPS05163 Pin 1 Pin 2/4 D PIN 3 S Value 4.7 3.9 Unit A ID puls dv/dt 18.8 6 kV/µs VGS Ptot Tj , Tstg ±20 1.8 -55...+150 55/150/56 V T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 w w w .D a S a t e e h m o c . °C U 4 t W 1999-09-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSP308 Unit max. 25 110 70 K/W K/W RthJS RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 10 0.05 0.03 1 100 100 0.075 0.05 nA Ω Ω V Unit V(BR)DSS VGS(t...