DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP19; BSP20 NPN high-voltage transistors
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP19; BSP20 NPN high-
voltage transistors
Product specification Supersedes data of 1997 Mar 03 1999 Jun 01
Philips Semiconductors
Product specification
NPN high-
voltage transistors
FEATURES Low current (max. 100 mA) High
voltage (max. 350 V). APPLICATIONS Switching and amplification Especially used in telephony and automotive applications. DESCRIPTION
handbook, halfpage
BSP19; BSP20
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
2, 4 1
NPN transistor in a SOT223 plastic package. PNP complement: BSP16.
1 Top view 2 3
MAM287
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP19 BSP20 VCEO collector-emitter
voltage BSP19 BSP20 VEBO IC IB Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base
voltage collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − −65 − −65 350 250 5 100 100 1.2 +150 150 +150 V V V mA mA W °C °C °C PARAMETER collector-base
voltage CONDITIONS open emitter − − 400 300 V V MIN. MAX. UNIT
1999 Jun 01
2
Philips Semiconductors
Product specific...