BSC106N025S G
OptiMOS®2 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for notebook ...
BSC106N025S G
OptiMOS®2 Power-Transistor
Features Fast switching
MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC for target applications Logic level / N-channel
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Product Summary V DS R DS(on),max ID 25 10.6 30 V mΩ A
Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant Type BSC106N025S G Package PG-TDSON-8 Marking 106N025S PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source
voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 0.94 page 1 T j, T stg T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 30 30 13 120 80 6 ±20 43 2.8 -55 ... 150 55/150/56 2006-05-10 °C mJ kV/µs V W Unit A
BSC106N025S G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance,
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Values typ. max.
Unit
R thJC R thJA minimal footprint 6 cm2 cooling area2)
-
-
2.4 62 45
K/W
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise sp...