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BS62LV1027

Brilliance Semiconductor

Very Low Power/Voltage CMOS SRAM

www.DataSheet4U.com BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1027 • Wide Vcc operation vol...


Brilliance Semiconductor

BS62LV1027

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Description
www.DataSheet4U.com BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1027 Wide Vcc operation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade : 17mA (@55ns) operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns) operating current I- grade : 15mA (@70ns) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 46mA (55ns) operating current I- grade : 47mA (55ns) operating current C-grade : 38mA (70ns) operating current I- grade : 39mA (70ns) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Easy expansion with CE2, CE1, and OE options Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V „ DESCRIPTION The BS62LV1027 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1027 has an automatic power down feature, reducing the power consumption significan...




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