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BRF610 Datasheet

Part Number BRF610
Manufacturers Bipolarics
Logo Bipolarics
Description NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
Datasheet BRF610 DatasheetBRF610 Datasheet (PDF)

www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applicatio.

  BRF610   BRF610






NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF610an excellent choice for battery applications. From 10 mA to greater than 20mA, ft is nominally 10 GHz. Maximum recommended continuous current is 20 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 9 7 1.5 20 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz f = 2.0 GHz GHz 12 18.1 12.8 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO C CB Powe.


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