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BPM0303CS Datasheet

Part Number BPM0303CS
Manufacturers BPS
Logo BPS
Description 30V Complementary MOSFET
Datasheet BPM0303CS DatasheetBPM0303CS Datasheet (PDF)

BPM0303CS 30V Complementary MOSFET General Description The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V  P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V  High power and current handing capability Typical Application Application  H-bridge  Inv.

  BPM0303CS   BPM0303CS






30V Complementary MOSFET

BPM0303CS 30V Complementary MOSFET General Description The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications. Features  N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V  P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V  High power and current handing capability Typical Application Application  H-bridge  Inverters Ordering Information N-channel P-channel Figure 1. Schematic Diagram Part Number Package Operating Temperature Packing Type BPM0303CS SOT23-6L -40 ℃ to 105 ℃ Tape & Reel 3,000pcs/Reel Marking 0303 BPM0303CS_EN_DS_Rev.1.0 www.bpsemi.com BPS Confidential – Customer Use Only 1 BPM0303CS 30V Complementary MOSFET Pin Configuration and Marking Information G1 1 S2 2 G2 3 0303 6 D1 5 S1 4 D2 Figure 2. Pin Config.


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