BPM0303CS
30V Complementary MOSFET
General Description
The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
High power and current handing capability
Typical Application
Application
H-bridge Inv.
30V Complementary MOSFET
BPM0303CS
30V Complementary MOSFET
General Description
The BPM0303CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications.
Features
N-Channel VDS =30V, ID =3.5A RDS(ON) < 58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel VDS =-30V, ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
High power and current handing capability
Typical Application
Application
H-bridge Inverters
Ordering Information
N-channel
P-channel
Figure 1. Schematic Diagram
Part Number
Package
Operating Temperature
Packing Type
BPM0303CS
SOT23-6L
-40 ℃ to 105 ℃
Tape & Reel 3,000pcs/Reel
Marking 0303
BPM0303CS_EN_DS_Rev.1.0
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1
BPM0303CS
30V Complementary MOSFET
Pin Configuration and Marking Information
G1 1 S2 2 G2 3
0303
6 D1 5 S1 4 D2
Figure 2. Pin Config.