BLV4N60

BLV4N60 N-channel Enhancement Mode Power MOSFET Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 2.2Ω 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Max. Thermal Resistance, Junction to Ambient Max. Value 1.2 62.5 http://www.belling.com.cn Page 1/6 Units V V A A A W W/℃ mJ A mJ oC oC Units ℃/ W ℃/ W 3/28/2007 BLV4N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drai...