BLS9G3135L-400

BLS9G3135L-400; BLS9G3135LS-400 LDMOS S-band radar power transistor Rev. 1 — 6 April 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed RF 3.1 to 3.5 32 425 12 43 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  High flexibility with respect to pulse formats  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 3.1...