BLS8G2731LS-400P

BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 1 — 26 May 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (dB) D [1] (%) PL(2dB) (W) Gp [2] (dB) D [2] (%) pulsed RF 2.7 to 2.9 32 540 11 45 610 10 46 2.9 to 3.1 32 490 12 47 550 11 49 2.7 to 3.1 32 530 12 45 590 11 47 [1] at 1 dB gain compression. [2] at 2 dB gain compression. 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  High flexibility with respect to pulse formats  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz NXP Semiconductors BLS8G2731L(S)-400P LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description BLS8G2731L-400P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLS8G2731LS-400P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information S...