BLS7G2730L-200P

BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7 to 3.0 32 pulsed RF [3] 2.9 to 3.1 32 [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA PL Gp (W) (dB) 200 12 220 12.5 220 12.5 D tr (%) (ns) 48 8 50 20 50 20 tf (ns) 5 6 6 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Excellent thermal stability  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  I...