BLS6G2731-120

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 120 13.5 48 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:  Output power = 120 W  Power gain = 13.5 dB  Efficiency = 48 %  Easy power control  Integrated ESD protection  High flexibility with respect to pulse...