BLP05H635XR

BLP05H635XR; BLP05H635XRG Power LDMOS transistor Rev. 4 — 21 September 2016 Product data sheet 1. Product profile 1.1 General description A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 63.86 127.72 VDS PL (V) (W) 50 35 50 35 50 35 Gp (dB) 27 29.4 26.8 D (%) 75 75.6 75.7 1.2 Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLP05H635XR; BLP05H635XRG Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLP05H635XR (SOT1223-2) 1 gate 2 ...