BLP0427M9S20

BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device. Test signal f IDq VDS PL(AV) PL(1dB) Gp D (MHz) (mA) (V) (dBm) (dBm) (dB) (%) pulsed 960 to 1215 100 28 - 43 17 >55 1-carrier 1805 to 1880 180 28 35 - 19 21 CW 30 to 512 150 28 - 43 19 >50 Table 2. Application performance Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq = 100 mA; tp = 300 s;  = 10 %; in a class-AB demo board, tested on straight lead device. Test signal f PL Gp PL(1dB) D RLin (MHz) (dBm) (dB) (dBm) (%) (dB) pulsed RF 1200 to 1400 43 19 43 63 9 1.2 Features and benefits  High effici...