Power LDMOS transistor
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1....
Description
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq VDS PL(AV) Gp D ACPR885k ACPR5M
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
(dBc)
IS-95
2500 to 2700 1300 28 30
16.5 22 48[1]
-
Single carrier W-CDMA 2500 to 2700 1300 28 50
16.5 27 -
38[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stabil...
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