Power LDMOS transistor
BLF7G24L-160P; BLF7G24LS-160P
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
...
Description
BLF7G24L-160P; BLF7G24LS-160P
Power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR885k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
IS-95
2300 to 2400
1200 28 30
18.5 27.5 45.5[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing...
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