BLF7G20L-250P

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1900 28 70 18 35 29.5[1] [1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High-efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (1805 MHz to 1880 MHz)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distortion capability  Internally matched for ease of ...