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BLF6G27-45

NXP Semiconductors

WiMAX power LDMOS transistor

www.DataSheet4U.com BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 — 15 December 2008 Product data sheet ...


NXP Semiconductors

BLF6G27-45

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www.DataSheet4U.com BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 — 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 7 Gp (dB) 18 ηD (%) 24 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64[2] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 350 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) www.DataSheet4U.com NXP Se...




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