BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 G...
BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
D
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
28 2.5 19.2 14
ACPR (dBc) 50[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply
voltage of 28 V and an IDq of 360 mA: Average output power = 2.5 W Power gain = 19.2 dB (typ) Efficiency = 14 % ...