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BLF6G20-180PN

NXP Semiconductors
Part Number BLF6G20-180PN
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Jul 1, 2009
Detailed Description www.DataSheet4U.com BLF6G20-180PN Power LDMOS transistor Rev. 03 — 30 March 2009 Product data sheet 1. Product profile ...
Datasheet PDF File BLF6G20-180PN PDF File

BLF6G20-180PN
BLF6G20-180PN

Overview
www.
DataSheet4U.
com BLF6G20-180PN Power LDMOS transistor Rev.
03 — 30 March 2009 Product data sheet 1.
Product profile 1.
1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 18 ηD (%) 29.
5 ACPR (dBc) −35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care shou...


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