BLF6G15LS-250PBRN

BLF6G15LS-250PBRN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1476 to 1511 28 60 18.5 34.0 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply voltage of 28 V and an IDq of 1410 mA:  Average output power = 60 W  Power gain = 18.5 dB  Efficiency = 34.0 %  ACPR = 30 dBc  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stabili...