BLF578
Power LDMOS transistor
Rev. 4 — 1 December 2016
Product data sheet
1. Product profile
1.1 General description
...
BLF578
Power LDMOS transistor
Rev. 4 — 1 December 2016
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Application information Mode of operation
CW pulsed RF
f (MHz) 108 225
VDS
PL
(V) (W)
50 1000
50 1200
Gp (dB) 26 24
D (%) 75 71
1.2 Features and benefits
Typical pulsed performance at frequency of 225 MHz, a supply
voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1200 W Power gain = 24 dB Efficiency = 71 %
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter appli...