Power LDMOS transistor
BLF184XR; BLF184XRS
Power LDMOS transistor
Rev. 3 — 1 April 2014
Product data sheet
1. Product profile
1.1 General d...
Description
BLF184XR; BLF184XRS
Power LDMOS transistor
Rev. 3 — 1 April 2014
Product data sheet
1. Product profile
1.1 General description
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 108
VDS
PL
(V) (W)
50 700
50 750
Gp (dB) 23.9 23.5
D (%) 73.5 81.9
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
NXP Semiconductors
BLF184XR; BLF184XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description BLF184XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF184XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number Package
Name Description
BLF184XR
-
flanged ceramic package; 2 mounting holes; 4 leads
BLF184XRS -
earless flanged ceramic package; 4 leads
Version SOT1214A SOT1214B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rati...
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