BLF183XRS

BLF183XR; BLF183XRS Power LDMOS transistor Rev. 2 — 22 May 2015 Product data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 88 to 108 pulsed RF 30 to 512 CW 30 to 512 VDS (V) 50 50 50 35 PL (W) 350 388 400 193 Gp (dB) 28 26 15 14 D (%) 75 80 48 47 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLF183XR; BLF183XRS Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF183XR (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF183XRS (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol    [1]      V\P    [1]      V\P Table 3. Ordering information Type number Package Name Description BLF183XR - flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF183XRS - earless flanged ceramic package; 4 leads Version SOT1121A SOT1121B 4. Limiting values Table ...