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BLD137DL Datasheet

Part Number BLD137DL
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BLD137DL DatasheetBLD137DL Datasheet (PDF)

isc Silicon NPN Power Transistors INCHANGE Semiconductor BLD137DL DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emit.

  BLD137DL   BLD137DL






Part Number BLD137D
Manufacturers Shenzhen SI Semiconductors
Logo Shenzhen SI Semiconductors
Description BLD SERIES TRANSISTORS
Datasheet BLD137DL DatasheetBLD137D Datasheet (PDF)

Shenzhen SI Semiconductors Co., LTD. Product Specification www.DataSheet4U.com BLD / BLD SERIES TRANSISTORS BLD137D ●: RoHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■RoHS COMPLIANT ●: ●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ● ( (Tc=25°C) ● Absolute Maximum Ratings(Tc=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage ■SWITCH MODE POWER SUPPLY TO-220 Collector Current Total .

  BLD137DL   BLD137DL







NPN Transistor

isc Silicon NPN Power Transistors INCHANGE Semiconductor BLD137DL DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 9 IC Collector Current-Continuous 12 PT Total Power Dissipation 80 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BLD137DL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCBO Collector-Base Voltage IC= 1mA; IE= 0 VEBO Emitter-Base Voltage IE= 1mA; IC= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 10A;VCE= 2V ICBO Collector Cutoff Current VCB= 400V ICEO Collector Cutoff Current VCE= 200V; IB= 0 hFE-1 DC Cu.


2020-09-07 : BDW83C    BDW84C    BDW94A    BDW93C    BD841    BD840    BD912I    BDT61AF    BD839    BD826   


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