Power LDMOS transistor
BLC9G22XS-400AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General d...
Description
BLC9G22XS-400AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
2110 to 2200
32
87
15.3 45
34 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-d...
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