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BLC9G22LS-120VT

Ampleon

Power LDMOS transistor

BLC9G22LS-120VT Power LDMOS transistor Rev. 1 — 14 July 2017 Product data sheet 1. Product profile 1.1 General descri...


Ampleon

BLC9G22LS-120VT

File Download Download BLC9G22LS-120VT Datasheet


Description
BLC9G22LS-120VT Power LDMOS transistor Rev. 1 — 14 July 2017 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2180 700 28 30 18.1 31 32.5 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)  Designed for broadband operation (1805 MHz to 1995 MHz)  Lower output capacitance for improved performance in...




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