Power LDMOS transistor
BLC9G22LS-120VT
Power LDMOS transistor
Rev. 1 — 14 July 2017
Product data sheet
1. Product profile
1.1 General descri...
Description
BLC9G22LS-120VT
Power LDMOS transistor
Rev. 1 — 14 July 2017
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2110 to 2180
700 28 30
18.1 31
32.5 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical) Designed for broadband operation (1805 MHz to 1995 MHz) Lower output capacitance for improved performance in...
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