Power LDMOS transistor
BLC9G21LS-60AV
Power LDMOS transistor
Rev. 1 — 6 July 2017
Product data sheet
1. Product profile
1.1 General descript...
Description
BLC9G21LS-60AV
Power LDMOS transistor
Rev. 1 — 6 July 2017
Product data sheet
1. Product profile
1.1 General description
60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.
Test signal
f
VDS PL(AV)
Gp
(MHz)
(V) (W)
(dB)
1-carrier W-CDMA
1930 to 1990
28 2.5
17.5
D (%) 30
ACPR (dBc) 39 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion Internally matched for ease of use Integr...
Similar Datasheet