BLC9G15LS-400AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1452 MHz to 1511 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
.
Power LDMOS transistor
BLC9G15LS-400AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1452 MHz to 1511 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1452 to 1511
32
93
16.5 48
35 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-d.