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BLC8G09XS-400AVT

Part Number	BLC8G09XS-400AVT
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLC8G09XS-400AVT Power LDMOS transistor Rev. 2 — 24 November 2017 Product data sheet 1. Product profile 1.1 General d...
Datasheet	BLC8G09XS-400AVT PDF File

Overview

BLC8G09XS-400AVT Power LDMOS transistor Rev.
2 — 24 November 2017 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.
8 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 791 to 821 32 93 17.
2 46 34 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
6 dB at 0.
01 % probability on CCDF.
...

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