BLC6G10LS-160

www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (dB) 23 ηD (%) 28 ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efficiency = 28 % N ACPR = −40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. Philips Semiconductors BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain g...