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BLC10G22LS-240PVT Datasheet

Part Number BLC10G22LS-240PVT
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC10G22LS-240PVT DatasheetBLC10G22LS-240PVT Datasheet (PDF)

BLC10G22LS-240PVT Power LDMOS transistor Rev. 2 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 .

  BLC10G22LS-240PVT   BLC10G22LS-240PVT






Power LDMOS transistor

BLC10G22LS-240PVT Power LDMOS transistor Rev. 2 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1600 28 60 19.7 30 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits  Excellent ruggedness  Excellent video bandwidth enabling full band operation  High efficiency  Low thermal resistance providing excellent thermal stability  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD protectio.


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