BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 05 — 1 September 2015
Product data sheet
1. Product profile
...
BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 05 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 128 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f (MHz)
VDS PL
Gp
D tr
tf
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
960 to 1200
50 450 17
50 20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an IDq of 100 mA, a tp of 128 s with of 10 %: Output power = 450 W Power gain = 17 dB Efficiency = 50 %
Easy power control Integrated ESD pro...
