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BL8N60F
N-Channel Power Mosfet
Description
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES RDS(ON) =1.2Ω@VGS = 10V. Pb Ultra Low gate charge (typical 28nC) Lead-free Low reverse transfer capacitance (CRSS = typical 12.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB MAXI...
GME
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N-Channel Power Mosfet
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