7A,650VN-ChannelPowerMosfet
FEATURES
RDS(ON)=1.35Ω@VGS = 10V Ultra low gate charge ( typical 30nC )
Pb
Lead-free
...
7A,650VN-ChannelPower
Mosfet
FEATURES
RDS(ON)=1.35Ω@VGS = 10V Ultra low gate charge ( typical 30nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 18 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL7N65F
ITO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VDSS VGSS
Parameter Drain-Source
voltage Gate -Source
voltage
Value 650 ±20
ID Continuous DrainCurrent
7.0
IDM Pulsed Drain Current EAS Avalanche Energy PD Power Dissipation TJ Junction Temperature
Single Pulsed
28 450 100 +150
TOPR, Tstg Operatingand Storage Temperature
-55 to +150
Units V V A A mJ W ℃ ℃
S066 Rev.A
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Production specification
7A,650VN-ChannelPower
Mosfet
BL7N65F
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
BVDSS...