7A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =1.35Ω@ VGS = 10V Ultra low gate charge ( typical 30 nC )
Pb
Lead...
7A,650V N-Channel Power
Mosfet
FEATURES
RDS(ON) =1.35Ω@ VGS = 10V Ultra low gate charge ( typical 30 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 18 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL7N65
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS
Gate -Source
voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
EAS Avalanche Energy PD Power Dissipation
Single Pulsed
TJ Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 650 ±20 7.0 28 450 100 +150 -55 to +150
Units V V A A mJ W ℃ ℃
X116 Rev.A
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Production specification
7A,650V N-Channel Power
Mosfet
BL7N65
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
OFF CHARACTERISTICS Drain-Source Breakdown V...
