BL3N60

3A,600V N-Channel Power Mosfet FEATURES  VDS = 600V , ID = 3A  RDS(ON) =3.6Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Ultra low gate charge ( typical 10 nC )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 600 ±30 3.0 12 200 7.5 4.5 75 70 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X098 Rev.A www.gmesemi.com 1 Production specification 3A,600V N-Channel Power Mosfet BL3N60 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unl...