BL36N10

N-Channel Power MOSFET FEATURES  VDS=100V  ID = 36A @VGS = 10V  RDS(ON) < 22mΩ @VGS = 10V < 25mΩ @VGS = 6.0V . APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. Production specification BL36N10 TO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 100 Unit V VGS ID IDM PD EAS RθJA RθJC Tj Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ TC=100℃ Drain Current(pulsed) Power Dissipation at TC=25℃ TC=100℃ Avalanche Energy(Single Pulsed) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction Temperature Junction and StorageTemperature Range ±20 36 24 144 34 14 200 V A A W mJ 40 ℃/W 2.3 ℃/W +150 ℃ -55 to +150 ℃ X131 Rev.A www.gmesemi.com 1 Production specification N-Channel Power MOSFET BL36N10 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-So...