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BL3415
Dual P-Channel Power Mosfet
Description
Production specification Dual P-Channel Enhancement Mode Field Effect Transistor BL3415 FEATURES Electrostatic Sensitive Devices. VDS (V) = -20V ID =-4 A RDS(ON) < 50mΩ (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -2.5V) RDS(ON) < 100mΩ (VGS = -1.8V) Pb Lead-free APPLICATIONS P-channel enhancement mode effect transistor. Switching application. ORDERI...
GME
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