BL3407

Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = - 30V  ID = - 4.1  RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3407 3407 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -30 VGSS ID IDM PD RθJA Gate -Source voltage ±20 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -4.1 -3.5 -20 1.4 1 90 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C301 Rev.A www.gmesemi.com 1 Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 ELECTRICAL CHARACTERISTIC...