BL3401L

P-Channel High Density Trench MOSDET FEATURES  Super high dense cell trench design for low RDS(ON).  Rugged and Reliable.  Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. Production specification BL3401 ORDERING INFORMATION Type No. Marking BL3401 3401 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -30 ±12 -4.2 -16 -2.2 1.25 75 -55 to +150 Units V V A A W ℃/W ℃ C194 Rev.A www.gmesemi.com 1 Production specification P-Channel High Density Trench MOSDET BL3401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test con...